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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18009/D Designer'sTM Data Sheet SWITCHMODETM NPN Silicon Planar Power Transistor The MJE/MJF18009 has an application specific state-of-the-art die designed for use in 220 V line-operated Switchmode Power supplies and electronic ballast ("light ballast"). These high voltage/high speed transistors exhibit the following main features: * Improved Efficiency Due to Low Base Drive Requirements: -- High and Flat DC Current Gain hFE -- Fast Switching -- No Coil Required in Base Circuit for Turn-Off (No Current Tail) * Full Characterization at 125_C * Motorola "6 SIGMA" Philosophy Provides Tight and Reproducible Parametric Distributions * Specified Dynamic Saturation Data * Two Package Choices: Standard TO-220 or Isolated TO-220 MAXIMUM RATINGS MJE18009 MJF18009 POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS IIIIIIIIIIIIIIIIIIIIIIII I II II I I I I II IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII III I I I III IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIII III I I I I II IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIII IIII II III I I I I II IIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIII IIII I I II IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIII Rating Symbol VCEO VCES MJE18009 MJF18009 Unit Vdc Vdc Vdc Vdc Adc Adc Collector-Emitter Sustaining Voltage 450 Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Voltage 1000 1000 9 VCBO VEBO IC ICM IB IBM PD Collector Current -- Continuous -- Peak (1) Base Current -- Continuous -- Peak (1) 10 20 4 8 *Total Device Dissipation @ TC = 25C *Derate above 25_C Operating and Storage Temperature RMS Isolation Voltage (2) (1s, 25C, Humidity 30%) TC = 25C 150 1.2 50 0.4 Watt W/_C TJ, Tstg VISOL1 VISOL2 VISOL3 - 65 to 150 CASE 221A-06 TO-220AB _C V Per Figure 22 Per Figure 23 Per Figure 24 4500 3500 1500 THERMAL CHARACTERISTICS Rating Symbol RJC RJA TL MJE18009 0.83 62.5 MJF18009 2.5 62.5 Unit Thermal Resistance -- Junction to Case -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds _C/W _C 260 CASE 221D-02 TO-220 FULLPACK (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. (2) Proper strike and creepage distance must be provided. v Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design. Designer's and SWITCHMODE are trademarks of Motorola, Inc. (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I I II I I I II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIII I I I I II I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I I II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIII I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I I II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I I II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I MJE18009 MJF18009 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) DYNAMIC SATURATION VOLTAGE DYNAMIC CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS Input Capacitance (VEB = 8 Vdc) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz) Dynamic Saturation Voltage: Determined 1 s and 3 s respectively after rising IB1 reaches 90% of final IB1 Collector Cutoff Current (VCE = 800 V, VEB = 0) Collector Cutoff Current (VCE = Rated VCES, VEB = 0) DC Current Gain (IC = 1.5 Adc, VCE = 5 Vdc) Collector-Emitter Saturation Voltage (IC = 3 Adc, IB = 0.3 Adc) Base-Emitter Saturation Voltage (IC = 3 Adc, IB = 0.3 Adc) (IC = 5 Adc, IB = 1 Adc) (IC = 7 Adc, IB = 1.4 Adc) Emitter-Cutoff Current (VEB = 9 Vdc, IC = 0) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Collector-Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) (IC = 10 mAdc, VCE = 5 Vdc) (IC = 7 Adc, VCE = 1 Vdc) (IC = 5 Adc, VCE = 1 Vdc) (IC = 7 Adc, IB = 1.4 Adc) (IC = 5 Adc, IB = 1 Adc) IC = 3 Adc IB1 = 300 mAdc VCC = 300 V IC = 7 Adc IB1 = 1.4 Adc VCC = 300 V Characteristic @ 3 s @ 1 s @ 3 s @ 1 s @ TC = 25C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C VCEO(sus) VCE(dsat) VCE(sat) VBE(sat) Symbol ICEO IEBO ICES Cob hFE Cib fT Min 450 14 10 10 8 7 5 2750 8 13.5 0.35 0.4 13 11.5 Typ 150 0.3 0.3 0.8 0.9 0.9 2 2.7 0.3 0.3 10 7.5 15 21 29 12 25 4 8 3500 0.6 0.65 1.1 1.15 1.25 Max 0.6 0.65 100 100 500 100 100 200 0.7 0.9 34 Adc Adc Adc MHz Unit Vdc Vdc Vdc pF pF -- -- -- V 2 Motorola Bipolar Power Transistor Device Data IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIII I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIII I I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIII I I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIII I I I I II I I I IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIII I I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIII I I I I II I I I IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 H) SWITCHING CHARACTERISTICS: Resistive Load (D.C. 10%, Pulse Width = 20 s) Crossover Time Storage Time Fall Time Crossover Time Storage Time Fall Time Crossover Time Storage Time Fall Time Turn-off Time Turn-on Time Turn-off Time Turn-on Time Turn-off Time Turn-on Time IC = 7 Adc, IB1 = 1.4 Adc IB2 = 3.5 Adc VCC = 300 Vdc IC = 3 Adc, IB1 = 0.3 Adc IB2 = 1.5 Adc VCC = 300 Vdc Characteristic IC = 5 Adc, IB1 = 1 Adc IB2 = 2.5 Adc VCC = 300 Vdc IC = 7 Adc IB1 = 1.4 Adc IB2 = 3.5 Adc IC = 3 Adc IB1 = 0.3 Adc IB2 = 1.5 Adc IC = 5 Adc IB1 = 1 Adc IB2 = 2.5 Adc @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C Symbol ton ton ton toff toff toff tc ts tc ts tc ts tf tf tf Min Motorola Bipolar Power Transistor Device Data 1.75 2.25 1.75 2.1 1.28 1.6 Typ 225 300 105 150 260 300 250 300 175 500 120 350 220 220 110 135 110 125 2.4 3.1 2.2 2.6 2 2.6 2.75 2.75 Max 350 200 350 200 350 200 300 250 300 3.5 2.5 2.5 2.5 MJE18009 MJF18009 Unit s s s s s s ns ns ns ns ns ns ns ns ns 3 MJE18009 MJF18009 TYPICAL STATIC CHARACTERISTICS 100 VCE = 1 V hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN TJ = 125C TJ = 25C TJ = 125C 10 100 VCE = 5 V 10 TJ = - 20C TJ = 25C 1 0.01 10 0.1 1 IC, COLLECTOR CURRENT (AMPS) 100 1 0.01 10 0.1 1 IC, COLLECTOR CURRENT (AMPS) 100 Figure 1. DC Current Gain @ 1 Volt Figure 2. DC Current Gain @ 5 Volt 2 TJ = 25C 8A VCE , VOLTAGE (VOLTS) VCE , VOLTAGE (VOLTS) 5A 3A 1 10 1 IC/IB = 10 IC = 1 A 0.1 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 0.01 0.01 IC/IB = 5 TJ = 125C TJ = 25C 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 3. Collector Saturation Region Figure 4. Collector-Emitter Saturation Voltage 1.1 IC/IB = 5 IC/IB = 10 VBE , VOLTAGE (VOLTS) C, CAPACITANCE (pF) 0.9 TJ = - 20C 0.7 TJ = 25C 0.5 TJ = 125C 0.3 0.01 10 Cib TJ = 25C f(test) = 1 MHz 1 Cob 0.1 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 Figure 5. Base-Emitter Saturation Region Figure 6. Capacitance 4 Motorola Bipolar Power Transistor Device Data MJE18009 MJF18009 TYPICAL SWITCHING CHARACTERISTICS 2 IBoff = IC/2 VCC = 300 V PW = 20 s t, TIME ( s) TJ = 125C TJ = 25C 5 IBoff = IC/2 VCC = 300 V PW = 20 s 4 IC/IB = 5 t, TIME ( s) 3 IC/IB = 10 1 IC/IB = 10 2 1 0 1 4 7 IC, COLLECTOR CURRENT (AMPS) IC/IB = 5 10 0 1 TJ = 125C TJ = 25C 7 4 IC, COLLECTOR CURRENT (AMPS) 10 Figure 7. Resistive Switching, ton Figure 8. Resistive Switching, toff 5 4 IC/IB = 5 IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 H 6 5 t si , STORAGE TIME (s) 4 3 2 1 IC/IB = 10 9 10 IC = 6.5 A 0 3 5 7 11 9 hFE, FORCED GAIN 13 15 TJ = 125C TJ = 25C IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 H IC = 3 A t, TIME (ns) 3 2 1 TJ = 125C TJ = 25C 1 2 3 0 4 5 6 7 8 IC, COLLECTOR CURRENT (AMPS) Figure 9. Inductive Storage Time, tsi Figure 10. Inductive Storage Time 350 TJ = 125C TJ = 25C tc 300 IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 H 300 tc 200 t, TIME (ns) 100 tfi 0 TJ = 125C TJ = 25C 11 1 2 3 t, TIME (ns) 250 200 IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 H tfi 150 100 1 3 5 7 9 IC, COLLECTOR CURRENT (AMPS) 4 5 6 7 8 IC, COLLECTOR CURRENT (AMPS) 9 10 Figure 11. Inductive Switching, tc & tfi @ IC/IB = 5 Figure 12. Inductive Switching, tc & tfi @ IC/IB = 10 Motorola Bipolar Power Transistor Device Data 5 MJE18009 MJF18009 TYPICAL SWITCHING CHARACTERISTICS 160 IC = 3 A 140 t fi , FALL TIME (ns) 120 100 IC = 6.5 A 80 60 40 3 IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 H 4 5 6 7 8 9 10 11 hFE, FORCED GAIN 12 13 14 15 TJ = 125C TJ = 25C t c , CROSSOVER TIME (ns) 300 400 IC = 3 A IBoff = IC/2 VCC = 15 V VZ = 300 V LC = 200 H 200 IC = 6.5 A 100 3 5 TJ = 125C TJ = 25C 7 9 11 hFE, FORCED GAIN 13 15 Figure 13. Inductive Fall Time Figure 14. Inductive Crossover Time TYPICAL CHARACTERISTICS 100 IC, COLLECTOR CURRENT (AMPS) 5 ms 10 1 ms 10 s EXTENDED SOA 1 MJE18009-DC IC, COLLECTOR CURRENT (AMPS) 1 s 12 TC 125C GAIN 4 LC = 500 H 8 4 -5 V 0V 0 0.1 MJF18009-DC 0.01 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 -1.5 V 1100 200 500 800 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 15. Forward Bias Safe Operating Area Figure 16. Reverse Bias Switching Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on T C = 25C; T J (pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 15 may be found at any case temperature by using the appropriate curve on Figure 17. TJ(pk) may be calculated from the data in Figures 20 and 21. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn-off with the base-to-emitter junction reverse biased. The safe level is specified as a reverse-biased safe operating area (Figure 16). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Motorola Bipolar Power Transistor Device Data 1.0 SECOND BREAKDOWN DERATING POWER DERATING FACTOR 0.8 0.6 0.4 THERMAL DERATING 0.2 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) 140 160 Figure 17. Forward Bias Power Derating 6 MJE18009 MJF18009 TYPICAL SWITCHING CHARACTERISTICS (IB = IC/2 FOR ALL CURVES) 10 VCE dyn 1 s dyn 3 s 0V 9 8 7 6 5 4 90% IB 1 s IB 3 s TIME 3 2 1 0 0 1 2 3 4 TIME 5 6 7 8 IB 90% IB1 Vclamp 10% Vclamp tc 10% IC tsi IC 90% IC tfi Figure 18. Dynamic Saturation Voltage Measurements Figure 19. Inductive Switching Measurements Table 1. Inductive Load Switching Drive Circuit +15 V 1 F 100 3W MTP8P10 100 F VCE PEAK MTP8P10 MPF930 MUR105 +10 V MPF930 A 50 MJE210 COMMON 500 F 150 3W MTP12N10 RB2 V(BR)CEO(sus) L = 10 mH RB2 = VCC = 20 Volts IC(pk) = 100 mA Iout IB IB2 Inductive Switching L = 200 H RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RBSOA L = 500 H RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RB1 VCE IB1 IC PEAK 150 3W 1 F -Voff Motorola Bipolar Power Transistor Device Data 7 MJE18009 MJF18009 TYPICAL THERMAL RESPONSE (IB = IC/2 FOR ALL CURVES) 1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 0.1 0.05 0.02 SINGLE PULSE 0.01 0.01 0.1 1 t, TIME (ms) t1 P(pk) t2 DUTY CYCLE, D = t1/t2 10 RJC(t) = r(t) RJC RJC = 0.83C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 100 1000 Figure 20. Typical Thermal Response (ZJC(t)) for MJE18009 1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.1 1 10 t, TIME (ms) 100 1000 10000 100000 t1 P(pk) t2 DUTY CYCLE, D = t1/t2 RJC(t) = r(t) RJC RJC = 2.5C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) Figure 21. Typical Thermal Response (ZJC(t)) for MJF18009 8 Motorola Bipolar Power Transistor Device Data MJE18009 MJF18009 TEST CONDITIONS FOR ISOLATION TESTS* MOUNTED FULLY ISOLATED PACKAGE LEADS MOUNTED FULLY ISOLATED PACKAGE LEADS MOUNTED FULLY ISOLATED PACKAGE LEADS CLIP CLIP 0.107 MIN 0.107 MIN HEATSINK 0.110 MIN HEATSINK HEATSINK Figure 22. Clip Mounting Position for Isolation Test Number 1 Figure 23. Clip Mounting Position for Isolation Test Number 2 Figure 24. Screw Mounting Position for Isolation Test Number 3 * Measurement made between leads and heatsink with all leads shorted together MOUNTING INFORMATION** 4-40 SCREW PLAIN WASHER CLIP HEATSINK COMPRESSION WASHER NUT HEATSINK Figure 25a. Screw-Mounted Figure 25b. Clip-Mounted Figure 25. Typical Mounting Techniques for Isolated Package Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Motorola Bipolar Power Transistor Device Data 9 MJE18009 MJF18009 PACKAGE DIMENSIONS B 4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. F C T A S -T- Q 123 H K Z L V G D N U R J DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 STYLE 1: PIN 1. 2. 3. 4. CASE 221A-06 TO-220AB ISSUE Y -T- F Q A 123 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES DIM MIN MAX A 0.621 0.629 B 0.394 0.402 C 0.181 0.189 D 0.026 0.034 F 0.121 0.129 G 0.100 BSC H 0.123 0.129 J 0.018 0.025 K 0.500 0.562 L 0.045 0.060 N 0.200 BSC Q 0.126 0.134 R 0.107 0.111 S 0.096 0.104 U 0.259 0.267 STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27 0.46 0.64 12.70 14.27 1.14 1.52 5.08 BSC 3.21 3.40 2.72 2.81 2.44 2.64 6.58 6.78 -B- C S U H K -Y- G N L D 3 PL M J R 0.25 (0.010) B M Y CASE 221D-02 (ISOLATED TO-220 TYPE) UL RECOGNIZED: FILE #E69369 ISSUE D How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 10 Motorola Bipolar Power Transistor Device Data *MJE18009/D* MJE18009/D |
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